SEMICONDUCTOR INJECTION LASER Russian patent published in 2007 - IPC H01S5/32 

FIELD: quantum electronics; pumping solid-state lasers.

SUBSTANCE: proposed semiconductor injection laser has separate-confinement heterostructure incorporating quantum-size active region, waveguide top and bottom layers, p and n emitters. Emitter of p polarity of conductivity is made of solid Al_XpGa_1-Xp solution. Emitter of n polarity of conductivity is made of solid Al_XnGa_1-XnAs solution. Waveguide top layer is made of solid Al_YtGa_1-YtAs solution. Waveguide bottom layer is made of solid Al_YbGa_1-YbAs solution. Mole fraction of Xp in solid Al_XpGa_1-XpAs solution ranges between 0.5 and 0.7. Mole fraction of Xn in Al_XnGa_1-XnAs solution is between 0.3 and 0.4. Mole fraction of Yt in solid Al_YtGa_1-YtAs solution at p emitter boundary equals Xp value and monotonously reduces down to 0.25 ≤ Yt ≤ 0.30. Mole fraction of Yb in solid Al_YbGa_1-YbAs solution at n emitter boundary monotonously reduces down to 0.25 ≤ Yb ≤ 0.30. Waveguide top layer thickness is between 320 and 380 nm. Waveguide bottom layer thickness is between 470 and 530 nm.

EFFECT: reduces optical loss, enhance efficiency, reduced radiation power density at optical faces of laser, enhanced service life of device.

1 cl, 1 dwg, 1 tbl