HIGH-TEMPERATURE SEMICONDUCTOR PRESSURE CONVERTER BASED ON POLYSILICON-DIELECTRIC STRUCTURE Russian patent published in 2014 - IPC G01L9/04 

FIELD: measurement equipment.

SUBSTANCE: invention relates to the field of measurement equipment, in particular, to converters of low pressures, and may be used in development and manufacturing of small-sized semiconductor pressure converters that are operable under higher temperatures. Substance: a semiconductor pressure converter comprises an elastic element (1), made from silicon with a surface coated by an insulating layer of silicon dioxide (2), where strain gauges (3) are formed from polycrystalline silicon, combined with the help of switching buses (4) into a multi-element bridge circuit (5). The circuit (5) comprises three measurement bridges, each comprising four strain gauges (6) of identical rating, and four additional strain gauges (7), the nominal resistance of which is four times less than the resistance of strain gauges (6). Assemblies of measurement diagonals of each bridge are serially connected to each other, and additional strain gauges (7) are connected into circuits of power supply of the first and third bridges so that they form an open measurement bridge, arms of which are connected to three closed bridges. The output voltage of the circuit is taken from extreme assemblies of the measurement diagonal of the first and third bridges.

EFFECT: increased accuracy and sensitivity of a converter in the range of high temperatures.

2 dwg