FIELD: electronic engineering.
SUBSTANCE: invention relates to removal of so-called "wall deposits" from metallic surfaces, especially from aluminum and aluminum-containing surfaces, in particular in semiconductor element manufacture process. Invention consists in that composition serving to remove residual polymers from indicated surfaces includes, dissolved in water, H2SiF6 and/or HBF4 in total amount 0.001-0.05%, H2SO4 1-17%, and H2O2 1-12%. Also proposed is use of this composition to remove residual polymers from aluminum-containing surfaces and use of H2SiF6 and/or HBF4 as fluorine-containing inorganic additive in above-said composition as well as a removal procedure.
EFFECT: stabilized aluminum and/or aluminum/copper alloy etching rates within a wide additive concentration range and ensured removal of residual polymers without damage to metallization layers and current conducting paths.
8 cl, 13 dwg
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