METHOD OF MAKING SEMICONDUCTOR LIGHT-EMITTING ELEMENTS Russian patent published in 2013 - IPC H01L33/30 

FIELD: electricity.

SUBSTANCE: according to the invention, flows of chemically active gases, every of which comprises one of metals of the third group, are supplied to a working zone in parallel with the reactor axis. Layers with a different quantitative ratio of metals of the third group are produced by variation of gas flow rates. For the period of flow rates variation, the substrate is moved from the working zone into a zone of growth suspension. Prior to deposition of the first layer, a flow of a chemically active gas containing gallium and an ammonia flow are simultaneously supplied into the working zone for deposition of gallium nitride deposits onto the reactor walls. Gallium nitride deposits protect quartz walls of the reactor against parasite reactions with gaseous aluminium chlorides. Ammonia is supplied into the working zone simultaneously with the direction of chemically active gases supply and at the side opposite to the direction of supply of gas flows containing third group metals, top down relative to the substrate surface. Supply of ammonia from two sides makes it possible to flexibly and efficiently vary conditions of growth of semiconductor layers based on third group metal nitrides, and also to practically exclude the ammonia flow break-off from the substrate surface in process of layer deposition.

EFFECT: invention makes it possible to increase reproducibility of characteristics of manufactured light-emitting elements.

4 cl, 2 tbl