FACILITY FOR CRYSTAL GROWTH Russian patent published in 2009 - IPC C30B25/00 C30B25/14 C30B29/38 

FIELD: metallurgy.

SUBSTANCE: facility for growth of crystals out of gas phase, mainly nitrides of metals of III group, consists of vacuum-processed reactor 1, of device 2, which is installed inside reactor for fastening pad 3, of at least one source 4 of metal of III group containing metal of III group in liquid state, of at least one pressure tight input 5, connecting internal part of reactor with source of gas reagent supply, and of at least one device 8 for output gases from reactor. The facility additionally contains at least one vacuum-processed container 9 with metal of III group in liquid state; the container is assembled outside reactor 1, internal volume of which filled with gas is connected by vacuum-processed channel 11 with internal volume of reactor 1; communication between metal of III group in liquid state in container 9, located outside the reactor, and metal of III group in source 4, located inside the reactor, is facilitated by mode of communicating vessels with vacuum-processed channel 15 passing through vacuum-processed input 5 in vacuum-processed reactor 1; also container 9 with metal of III group in liquid state located outside reactor is intended to vertical displacement.

EFFECT: increased stability of process of crystal growth and simplification of equipment operating are ensured due to possibility of control over level of metal in liquid state and refilling volume of metal in source located inside reactor without disassembly of equipment.

5 cl, 1 dwg