METHOD FOR GROWING MULTILAYER SEMICONDUCTOR NITRIDE HETEROSTRUCTURE Russian patent published in 2008 - IPC H01L21/205 

FIELD: semiconductor nitride heterostructure growing technology; manufacture of various optical and electronic instruments and devices.

SUBSTANCE: proposed method using molecular-beam epitaxy for growing multilayer semiconductor nitride heterostructure that has substrate with template layer covered with semiconductor layers includes substrate heating, nitridation of substrate surface layer by feeding ammonia flow to substrate surface, formation of template layer by simultaneous supply of aluminum atoms and ammonia flow thereto until desired thickness of template layer is attained, this being followed by growing overlying semiconductor layers by way of molecular-beam epitaxy; substrate is heated to 1100-1200 °C, ammonia and aluminum flows are supplied in proportion of NH₃/Al = 100-400.

EFFECT: reduced density of template-layer crystal lattice inherent flaw density, enhanced quality of heterostructure overlying semiconductor layers.

1 cl, 1 dwg