NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT Russian patent published in 2015 - IPC H01L33/32 H01S5/323 

FIELD: physics.

SUBSTANCE: nitride semiconductor ultraviolet light-emitting element comprises: a base structure which includes a sapphire substrate (0001) and an AlN layer formed on the substrate; and a section of the structure of the light-emitting element, which includes an n-type coating layer of an n-type AlGaN semiconductor layer, an active layer, having an AlGaN semiconductor layer, a p-type coating layer of a p-type AlGaN semiconductor layer, wherein said n-type coating layer, active layer and p-type coating layer are formed on the base section of the structure. The plane (0001) of the substrate is inclined at an angle of 0.6-3.0°, and the molar ratio of AlN of the n-type coating layer is equal to greater than 50%.

EFFECT: invention improves the crystal quality of an AlGaN-based semiconductor layer formed on a sapphire substrate by optimising the inclination angle, and increases light-emitting output of the nitride semiconductor ultraviolet light-emitting element.

5 cl, 13 dwg