MICROWAVE POWER LIMITER Russian patent published in 2015 - IPC H01L39/00 

FIELD: electricity.

SUBSTANCE: microwave power limiter includes electrodes and capacitive elements. The capacitive elements are represented by capacitors, the microwave power limiter includes a substrate of sapphire with the following in-series layout: a buffer layer of AlN, a buffer layer of GaN, a layer of undoped GaN, a layer of a solid solution AlGaN and in the interface of GaN/AlGaN heterostructure with a two-dimension electron gas of high density a semiconductor channel is formed, on top of the solid solution AlGaN there is a chemically stable moderating layer of GaN, on top of the latter a dielectric is applied, which contains a layer of hafnium dioxide and on top of the dielectric there are stripped metal electrodes, which form the top plates of the capacitors. The first electrode formed on the semiconductor channel and the semiconductor channel itself form the first voltage-controlled capacitor, and the second electrode formed on the semiconductor channel and the semiconductor channel itself form the second voltage-controlled capacitor.

EFFECT: potential reduction of direct losses at a required level of the input power limitation and provision of the required limitation level of the microwave input power.

2 cl, 2 dwg