SHF SWITCHING DEVICE Russian patent published in 2016 - IPC H01P1/10 

FIELD: electricity.

SUBSTANCE: SHF switching device comprises electrodes and capacitance element made as a capacitor, at that SHF switching device includes the substrate of sapphire with the following layers in sequence: buffer layer of AlN, buffer layer of GaN, layer of undoped GaN, layer of AlGaN solid solution and in interface of GaN/AlGaN heterostructure two-dimension electron gas of high density is formed, and this gas serves as the lower capacitor plate. On top of AlGaN solid solution there is planarising layer of GaN, on top of it there is dielectric containing a layer of hafnium dioxide and layer of aluminium oxide. On top of the dielectric there are metal strip electrodes, which form the upper capacitor plate.

EFFECT: improved switching reliability and speed, increased level of output power and level of radiation resistance.

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