SEMICONDUCTOR HETEROSTRUCTURE OF FIELD-EFFECT TRANSISTOR Russian patent published in 2008 - IPC H01L29/772 

FIELD: heterostructures of semiconductor devices, primarily those of field-effect transistors.

SUBSTANCE: proposed semiconductor heterostructure of field-effect transistor has AlN single-crystalline substrate, GaN template layer, GaN channel layer, and Al_xGa_1-xN layer; disposed one on top of other between template and channel layers are intermediate Al_yGa_1-yN layer and Al_zGa_1-zN buffer layer, respectively; value of y at template layer boundary is 1 and at buffer layer boundary it equals buffer layer z value; in this case 0.3 ≤ x ≤0.5 and 0.1 ≤ z ≤0.5. Buffer layer in semiconductor heterostructure at channel layer boundary can be doped with Si through depth of 50 to 150 Å.

EFFECT: enhanced conductivity of heterostructure channel layer and, hence, enhanced working currents and power of field-effect transistors.

2 cl, 1 dwg