FIELD: physics.
SUBSTANCE: base of nitride semiconductor emitting ultraviolet radiation element, comprising a sapphire substrate with one of plane (0001) and plane inclined by a given angle relative to plane (0001), as main surface and AlN layer formed directly on main surface of sapphire substrate and made of AlN crystals having orientation relationship of epitaxial crystals with main surface, wherein average diameter of particles of AlN crystals of AlN layer with thickness of 20 nm from main surface is 100 nm or less.
EFFECT: invention enables to form a base of a nitride semiconductor emitting an ultraviolet radiation element with improved crystallinity of the AlN layer, by changing the AlN crystal growth mode relative to the conventional mode.
15 cl, 17 dwg
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