VARICAP Russian patent published in 2008 - IPC H01L29/93 

FIELD: variable-capacitance semiconductor diodes for frequency-selective devices.

SUBSTANCE: proposed varicap with its case accommodating p⁺-n-n⁺ mesa-structure between two contact pads for p⁺ and n⁺ layers and two external leads has points of exit of p⁺-n junction and p⁺ and n⁺ layers abutting thereto onto side surfaces of mesa-structure inclined relative to central axis. Inclined semiconductor surface layers of mesa-structure are transformed into surface insulating layers. Additionally introduced into varicap are two inorganic-material wafers whose first and second surfaces bear electrically interconnected current-conductive surface; contact pads of mesa-structure are electrically connected to conductive layers disposed on second surfaces of wafers. Space between second inner surfaces of wafers and side surfaces of mesa-structure is filled with high-temperature flexible sealant up to butt-end edges of wafers. The latter and sealant function as varicap case and conductive surface layers disposed on first outer surfaces of wafers, as its external leads.

EFFECT: enhanced high-value of operating frequency range and quality of varicap.

15 cl, 2 dwg