MANUFACTURING METHOD OF SILICON DIFFUSION DIODE Russian patent published in 2023 - IPC H01L21/329 

FIELD: electronic engineering.

SUBSTANCE: invention relates to methods for manufacturing discrete semiconductor devices using a highly developed surface relief. A method for manufacturing diffusion diodes using a highly developed surface relief with a deep mesostructure includes forming a deep mesostructure with matching elements over a dielectric mask, local oxidation of the side surface of the mesostructure over the dielectric mask, removing masking coatings, forming a diffusion transition, and forming a metallization overlapping the mesostructure over the dielectric coating of the upper ohmic contact, whereas at the first stage, before the formation of a deep mesostructure with matching elements in a single technological cycle, matching elements are formed, some of which can be either protected by dielectric or resistive layers, or unprotected and are intended mainly for linking the coordinates of the deep surface relief to semiconductor wafer and carrying out subsequent process operations, and other matching elements are additionally protected from the influence of subsequent process operations by resistive or other masks and are opened only before use for more accurate matching of the deep relief of the mesostructure with structural elements of the diode crystal requiring more accurate matching.

EFFECT: invention provides a more accurate matching of the deep relief of the mesostructure with the rest of the structural elements of the diode crystal during its manufacture, which makes it possible to achieve the required accuracy in the dimensions of the overlap of the mesostructure by metallization of the upper ohmic contact and the reproducibility of the structural dimensions and device characteristics of the manufactured diodes.

1 cl, 7 dwg