TWO VARIABLE CAPACITANCE DIODES ASSEMBLY BASED ON COMMON CATHODE (VERSIONS) Russian patent published in 2008 - IPC H01L29/93 

FIELD: electronics.

SUBSTANCE: there are there versions of assembly offered based on two variable capacitance diodes with common cathode. All assembly versions imply that side surfaces of p+- n- n+-mesostructures are inclined relative to central axis. Their inclined surface semiconductor layers are transformed into surface dielectric layers. First aversion of assembly implies that two mesostructures are formed on rectangular n+-base from one side and end with common contact area to low side of n+-base and two contact areas to two p+-layers of mesostructures. Common cathode terminal is formed with external conducting surface of lower rectangular substrate galvanically connected with common area to n+-bases of mesostructures. Anode terminals of assembly are metal layers coating external surface of upper dielectric substrate length and width of which are equal to length and width of lower substrate. Upper dielectric substrate is provided with two through plated holes, and its inner surface is coated with contact metal areas galvanically connected to anode contact areas to p+-layers of mesostructures. Space between inner surfaces of lower and upper substrates and side surfaces of mesostructures are filled with high-temperature elastic sealant up to front ends of both substrates.

EFFECT: increase of upper operating frequency and reliability of assembled variable capacitance diodes.

20 cl, 3 dwg