FIELD: indication equipment engineering, possible use for creating active-matrix vacuum luminescent displays for indication of text and graphic information.
SUBSTANCE: into pixel-anode control cell of active-matrix vacuum luminescent display, containing controlling and addressed n-channel MOS transistors, the source of controlling transistor is connected to pixel-anode, its drain is connected to anode power bus, and gate is connected to source of address transistor, the drain of address transistor is connected to column bus of matrix addressing, and its gate is connected to row bus of matrix addressing, an additional capacitor is introduced, its first contact is connected to gate of controlling transistor, and its second contact is connected to pixel-anode, where the capacity value of the additional capacitor is greater than total value of capacities between the gate of controlling transistor and its drain, substrate and gate of address transistor. Also, the cell features switching n-channel MOS transistor and additional bus, where the gate of aforementioned transistor is connected to the gate of address transistor, its drain is connected to second contact of additional capacitor, and its source is connected to additional bus; the additional bus is connected to the substrate.
EFFECT: improved quality of information indication on active-matrix vacuum luminescent displays due to increased brightness of luminescence of pixel-anodes.
3 cl, 2 dwg
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Authors
Dates
2008-04-20—Published
2006-04-17—Filed