STABILIZATION METHOD OF RESISTORS Russian patent published in 2020 - IPC H01C17/26 

FIELD: physics; technology of manufacturing.

SUBSTANCE: invention relates to the technology of making resistors, in particular to the stabilization of resistors, and can be used in production of metal-film strain gage pressure sensors, force, deformation and hybrid integrated circuits in radio engineering and instrument-making industry. Stabilization of resistors is carried out by "packets" of voltage pulses of certain amplitude, duration, porosity and energy in three stages, wherein energy of voltage pulse at first stabilization stage is set from condition of prevention of resistors burning out, at the second stage - from condition of temperature sufficiency for structuring of thin resistive film, at the third stage - on condition of provision of accelerated mutual diffusion of resistive film and dielectric film, wherein the pulse duration and amplitude at the first and second stabilization steps are set based on the provision of a sufficient temperature for structuring the thin resistive film, and at the third stabilization step, from the condition of providing sufficient temperature for oxidation of the upper layer of the resistive film and accelerated mutual diffusion of the resistive film and dielectric film.

EFFECT: technical result is higher stability of parameters of resistors during storage and operation.

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