FIELD: electric engineering.
SUBSTANCE: casing of integral circuit consists of base with multi-layer conducting structure and matrix of balls. Opening is made in central zone of base, in which mounting pad is installed for integral circuit, which contains from dielectric plate that is connected by means soldered seam with the surface of metal plate. Dielectric plate is made from aluminium nitride with coefficient of thermal linear expansion that is equal to coefficient of thermal linear expansion of silicon.
EFFECT: convenience in operation, allows to arrange connection of semi-conducting devices to energy source with high loads, at that providing efficient heat removal from integral circuit.
2 dwg
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