METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE Russian patent published in 2021 - IPC H01L33/22 H01L33/30 

FIELD: LED equipment.

SUBSTANCE: method for manufacturing a light-emitting diode based on the AlGaAs/GaAs heterostructure includes the formation of a frontal ohmic contact on the surface of the GaAs contact layer, etching of the AlGaAs/GaAs light-emitting surface using the mask of the frontal ohmic contact and texturing the light-emitting surface of the light-emitting diode using the mask of the frontal ohmic contact by liquid chemical selective etching of the GaAs contact layer of the heterostructure in an etcher containing ammonium hydroxide (NH₄OH), peroxide hydrogen (H₂O₂) and deionized water, and subsequent etching of the AlGaAs layer of the heterostructure to a depth of (0.8-1.1) mcm in an etcher containing ammonium fluoride (NH₄F), hydrogen fluoride (HF), hydrogen peroxide and deionized water.

EFFECT: invention makes it possible to increase the intensity of electroluminescence of a light-emitting diode made according to it, provides high manufacturability of the texturing process and reduced cost.

1 cl, 3 dwg, 3 ex