FIELD: chemistry.
SUBSTANCE: furnace for epitaxial growth of silicon carbide consists of a water cooled case with a cover, heater, heat shields, evaporation dish with a removable cover, viewing port, connection pipes for vacuuming, water cooling system, electrical power supply and control and measuring equipment. The case of the furnace is equipped with an access hole for loading the evaporation dishes, and the cavity of the furnace is fitted with a carrousel, around which there are evaporation dishes. The axis of the carrousel is joined to its rotation mechanism, while the evaporation dishes are fitted with provision for passing them on to the removable cover, fitted on the heater, through a lifting mechanism.
EFFECT: structure of the furnace allows for growing large sized high quality monocrystals in a continuous mode with high growth rate and stable temperature conditions.
4 dwg
| Title | Year | Author | Number |
|---|---|---|---|
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|
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| METHOD OF PRODUCTION OF EPITAXIAL LAYERS OF SILICON CARBIDE (VERSIONS), STRUCTURE OF SILICON CARBIDE (VERSIONS) | 1995 |
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