PLANT TO PRODUCE MULTI-LAYER STRUCTURES Russian patent published in 2009 - IPC H01L21/20 

Abstract RU 2353999 C1

FIELD: mechanics.

SUBSTANCE: proposed plant comprises a vacuum chamber, carriage with rotation mechanism, heater with a substrate, ion gun, crystal growth control systems and those to produce and maintain ultrahigh vacuum. Note that it additionally comprises a device arranged aligned with the said ion gun and heater with substrate and incorporating a fixed screen with one hole, separator with one hole running on the axle linked up with its rotation mechanism, as well as tapered detachable target holder with lengthwise slot and with its inner surface supporting the targets fixed thereto. Fixed tapered screen with lengthwise slot and one hole is arranged coaxially with the target holder, the screen inner surface being provided with a replaceable gasket. Note that the holes in the screen, target holder and mask are arranged at equal distance from the axis of rotation of separator.

EFFECT: perfected design of device to produce multi-layered structures using ion gun.

3 dwg

Similar patents RU2353999C1

Title Year Author Number
DEVICE FOR OBTAINING THIN FILMS OF NITRIDE COMPOUNDS 2011
  • Bilalov Bilal Arugovich
  • Gitikchiev Magomed Akhmedovich
  • Safaraliev Gadzhimet Kerimovich
RU2465372C1
FURNACE FOR EPITAXIAL GROWTH OF SILICON CARBIDE 2006
  • Bilalov Bilal Arugovich
  • Safaraliev Gadzhimet Kerimovich
  • Gitikchiev Magomed Akhmedovich
RU2330128C2
DOUBLE-BEAM ION SOURCE 2009
  • Bilalov Bilal Arugovich
  • Gitikchiev Magomed Akhmedovich
  • Safaraliev Gadzhimet Kerimovich
RU2407100C1
CRUCIBLE FOR SILICON CARBIDE EPITAXY 2006
  • Bilalov Bilal Arugovich
  • Safaraliev Gadzhimet Kerimovich
  • Gitikchiev Magomed Akhmedovich
RU2324019C2
METHOD FOR PRODUCTION OF THIN FILM OF COPPER AND INDIUM DISELENIDE CuInSe 2007
  • Bilalov Bilal Arugovich
  • Gadzhiev Timur Mazhlumovich
  • Safaraliev Gadzhimet Kerimovich
RU2354006C1
METHOD OF MAKING ALUMINIUM NITRIDE FILM ON SAPPHIRE SUBSTRATE AND INSTALLATION FOR REALISING SAID METHOD 2008
  • Bilalov Bilal Arugovich
  • Gitikchiev Magomed Akhmedovich
  • Safaraliev Gadzhimet Kerimovich
RU2388107C1
METHOD FOR PRODUCTION OF EPITAXIAL FILMS OF (SiC)(AlN) SOLID SOLUTION 2011
  • Ramazanov Shikhgasan Muftjalievich
  • Kurbanov Malikazhdar Kurbanovich
  • Bilalov Bilal Arugovich
  • Safaraliev Gadzhimet Kerimovich
RU2482229C1
CRUCIBLE FOR GROWTH OF VOLUME SINGLE CRYSTAL OF ALUMINIUM NITRIDE (AlN) 2008
  • Bilalov Bilal Arugovich
  • Gitikchiev Magomed Akhmedovich
  • Safaraliev Gadzhimet Kerimovich
RU2389832C1
CRUCIBLE FOR GROWTH OF MONOCRYSTAL INGOT OF SILICON CARBIDE WITH ALUMINIUM NITRIDE AND HETEROSTRUCTURES ON THEIR BASE 2010
  • Bilalov Bilal Arugovich
  • Gitikchiev Magomed Akhmedovich
  • Safaraliev Gadzhimet Kerimovich
RU2425914C1
METHOD TO MANUFACTURE MICROINSTRUMENT 2009
  • Abduev Aslan Khadzhimuratovich
  • Abduev Marat Khadzhi-Muratovich
  • Asvarov Abil Shamsudinovich
  • Akhmedov Akhmed Kadievich
  • Bilalov Bilal Arugovich
  • Safaraliev Gadzhimet Kerimovich
RU2425430C2

RU 2 353 999 C1

Authors

Bilalov Bilal Arugovich

Gitikchiev Magomed Akhmedovich

Safaraliev Gadzhimet Kerimovich

Dates

2009-04-27Published

2007-10-12Filed