CRUCIBLE FOR GROWTH OF MONOCRYSTAL INGOT OF SILICON CARBIDE WITH ALUMINIUM NITRIDE AND HETEROSTRUCTURES ON THEIR BASE Russian patent published in 2011 - IPC C30B23/00 C30B23/02 C30B29/10 

FIELD: metallurgy.

SUBSTANCE: crucible consists of graphite case 1 with granulated poly-crystal source 7, 8, of cover 12, of base 13 and substrate 11, 17. Removable graphite container 3 with through cylinder channel 4 and radial orifices 5 is located in a cavity of graphite case 1. Matrix 9 with orifices 10 and substrates 11 is arranged over the container. A cavity of container 3 is sealed with pad 16; cover 12 with a threaded orifice and nut 2. Base 13 with a blind orifice and substrate 17 set on its surface is screwed into a threaded orifice of cover 12. There are used pads of graphite foil - graphlex to reduce leaks of heat energy flow from the container to environment through the cover and bottom of the case, and also for sealing an internal cavity of the crucible from leaks of vapours of charge. The rest parts are made of graphite of high density produced by procedure of isostatic moulding (for example, of graphite of MPG-9N grade).

EFFECT: raised working efficiency, material saving, more accurate control of substrate temperature, fabrication of both mono-crystal ingot and hetero-structures in one process cycle.

2 cl, 1 dwg