FIELD: metallurgy.
SUBSTANCE: device for obtaining thin films of nitride compounds consists of base, current leads, graphite heater, substrate holders, thermocouple, thereisolation with shield, current-conducting buses, device for creation of laminar flow of reaction gas, which is installed on the base under graphite heater, and casing. Device for creation of laminar flow of reaction gas includes metal housing in which heat-insulated bottle with gas supply pipe is installed. Slots are made in the bottle, heat insulator and metal housing, and gas supply pipe is arranged concentrically inside the bottle and equipped with a row of gas outlet openings. Diameter of the next opening made in gas supply pipe is larger than that of the previous opening so that area of internal section of pipe is equal to total area of sections of gas outlet openings.
EFFECT: economy of reaction gas owing to creating the laminar gas flow at the substrate surface is provided.
2 cl, 2 dwg
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