METHOD FOR GAS-PHASE CARBIDISATION OF SURFACE OF MONOCRYSTALLINE SILICON OF ORIENTATION (111), (100) Russian patent published in 2016 - IPC H01L21/20 

FIELD: instrument making.

SUBSTANCE: invention relates to production of thin films of semiconductor materials and can be used in making semiconductor devices, based on heteroface junctions. Method of gas-phase carbidisation of monocrystalline silicon substrate surface includes substrate heating by heat transfer from non-contacting heated table, as source of silicon substrate itself is used, as carbon source household mixture of propane-butane in ratio 1:1000-1:10000 in the presence of a mixture of argon-hydrogen is used, containing 10-50% of hydrogen, heating of substrate surface is performed to temperatures of 1350-1405°C using thermo-dressing up to 50°C from preset temperature, with cooling rates of less than 20°C/min in wide range of pressures in reactor of 5-1100 mbar, or gaseous hydrocarbons CH₄, C₂H₆, C₆H₈ are used as carbon source.

EFFECT: invention simplifies technology of producing thin films of polycrystalline silicon carbide on monocrystalline silicon by gas-phase carbidisation of monocrystalline silicon, improving quality of films due to high adhesion and small mismatch of crystal lattices.

1 cl, 1 dwg