FIELD: technological processes.
SUBSTANCE: invention relates to production of materials based on germanene EuGe2 and SrGe2 with high mobility of charge carriers, which can be used in making nanoelectronic devices. Atomic flow of europium or strontium with pressure (0.1÷100)⋅10-8 Torr is deposited on pre-cleaned surface of Ge(111) substrate, heated to Ts=250÷510 °C. Film with thickness of more than 100 nm is formed with subsequent optional annealing of obtained films at temperature of not more than Ts=530 °C.
EFFECT: provides stabilization of germanene and formation of films of crystalline modification hP3.
1 cl, 7 dwg, 4 ex
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