METHOD OF PRODUCT MANUFACTURE CONTAINING SILICON SUBSTRATE WITH FILM FROM CARBIDE OF SILICON ON ITS SURFACE Russian patent published in 2009 - IPC H01L21/205 

FIELD: physics.

SUBSTANCE: method of manufacture of product contains silicon substrate with film from silicon carbide on its surface, includes film synthesis on substrate surface at joint heating of silicon substrate and contacting with it carbon-bearing plates to temperature, below temperature of fusion of silicon, synthesis carry out in the environment of hydrogen or its intermixture with inertial gas at pressure 10-100 Pa. In quality of the carbon-bearing plate it is preferable to use a graphite plate. It is possible to use intermixture consisting of hydrogen and inertial gas with a volume concentration of hydrogen of 10-50% as medium. After carrying out of process of the carbide of silicon layer formation it is reasonable carrying out of etching and-or vacuum curing. It is possible to realise the method, when the carbon-bearing plate is placed from both legs of silicon substrate.

EFFECT: formation of carbide of silicon film of cubic polytype on surfaces of silicon layer, decrease in interior voltages, reduction of surface concentration of the flaws.

7 cl, 7 dwg