FIELD: semiconductor devices. SUBSTANCE: according to invention, layers are arranged in structure as follows: substrate of non-heat-resistant glass, insulating buffer layer of CaF2, silicon layer, shielding layer of CaF2, all obtained by evaporation in superhigh vacuum followed by annealing in closed process cycle. EFFECT: improved quality of heterostructure. 2 cl, 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE WITH HIGH LIFE TIME | 1993 |
|
RU2045106C1 |
| METHOD OF PRODUCTION OF PHOTOSENSITIVE RESISTIVE AND OPTICALLY NONLINEAR THIN-FILMED HETEROSTRUCTURES BASED ON SEMICONDUCTOR AND DIELECTRIC MATERIALS | 1993 |
|
RU2089656C1 |
| HETEROEPITAXIAL STRUCTURE WITH A DIAMOND HEAT SINK FOR SEMICONDUCTOR DEVICES AND METHOD FOR ITS MANUFACTURE | 2020 |
|
RU2802796C1 |
| METHOD FOR PRODUCING HETEROEPITAXIAL STRUCTURES InSb/GaaS | 1990 |
|
RU2063094C1 |
| CMOS/SOI MRAM MEMORY INTEGRATED WITH VLSI AND METHOD FOR PRODUCTION THEREOF (VERSIONS) | 2012 |
|
RU2532589C2 |
| INTEGRATED MULTICOMPONENT INFRARED PHOTODETECTOR UNIT | 2004 |
|
RU2278446C1 |
| CAPACITIVE PRESSURE PICKUP | 2003 |
|
RU2251087C2 |
| HETEROEPITAXIAL SEMICONDUCTOR STRUCTURE FOR PHOTODETECTOR CELL | 1991 |
|
RU2034369C1 |
| METHOD OF GROWING EPITAXIAL EUROPIUM MONOXIDE FILMS ON SILICON | 2014 |
|
RU2557394C1 |
| PHOTOSENSITIVE DEVICE AND METHOD OF ITS MANUFACTURE | 2018 |
|
RU2685032C1 |
