METHOD OF PRODUCING MONOCRYSTALLINE SiC Russian patent published in 2012 - IPC C30B23/00 C30B29/36 H01L21/461 

FIELD: chemistry.

SUBSTANCE: method of producing monocrystalline SiC through sublimation of a SiC source on a SiC seed crystal involves preliminary etching of the surface of the SiC seed crystal while raising temperature in a growth cell. The surface of the SiC seed crystal is etched using sublimated AlN by placing an AlN source between the seed crystal and the SiC source, for example in form of AlN powder placed in a cuvette mounted in the growth cell on a holder opposite the seed crystal or in form of a plate with an AlN layer mounted on the wall of the growth cell opposite the seed crystal. The amount of AlN placed in the growth cell is determined using the relationship M=3πnRρ(H²+r²), where M is the amount of AlN in the growth cell, g, n=0.5…2.0 is a statistical dispersion parameter, R is the depth of the broken layer of seed crystal, cm, ρ=3.2 is the density of the SiC seed crystal, g/cm³, H is the distance from the seed crystal to the AlN source, cm, r is the radius of the seed crystal, cm.

EFFECT: method simplifies and reduces the cost of producing monocrystalline SiC and prolongs the service life of the growth cell.

4 cl, 1 dwg, 1 tbl, 1 ex