METHOD FOR FORMATION OF GERMANIUM NANOCLUSTERS IN A GeO[SiO] FILM USING ELECTRON BEAM ANNEALING Russian patent published in 2023 - IPC H01L21/263 B82Y40/00 

FIELD: obtaining nanosized silicon-based composite structures.

SUBSTANCE: invention can be used in opto- and nanoelectronics. The method of formation of germanium nanoclusters in a GeO[SiO₂] film using electron beam annealing includes preliminary preparation of a thin GeO[SiO₂] film on a fused quartz substrate, followed by electron beam annealing. According to the invention, a thin film is obtained by simultaneous evaporation of GeO₂ and SiO₂ powders using electron beams in high vacuum (10^-6 Pa), while the evaporation rate of the target is selected so that the rate of deposition of both components on the quartz substrate is the same at a temperature of 100°C, then samples of the resulting film with a thickness of ~400 nm are covered with a protective layer of SiO₂ with a thickness of 10 nm when placed perpendicular to the electron beam in a vacuum chamber with a pressure of 10^-2 Pa, electron beam current density of 20 mA/cm² , with an accelerating voltage of 2000 V and subjected to electron beam annealing for 60 seconds.

EFFECT: provision of optimal modes of electron-beam annealing necessary for formation of germanium nanocrystals/nanoclusters in a GeO[SiO₂] film with controlled dimensions.

1 cl, 1 dwg