FIELD: physics, communications.
SUBSTANCE: objective is achieved by direct connection of emitters and bases of two mutually complementary transistors, connection of transistor emitters to input of secondary transformer winding, the output of which is connected to MIS-transistor source, and via resistor to transistor bases, collectors of which are connected to MIS-transistor gate in enabling direction via diodes.
EFFECT: improved reliability and jamming resistance of commutation device.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| MIS TRANSISTOR POWER KEY | 2008 |
|
RU2390094C2 |
| MIS TRANSISTOR POWER KEY | 2008 |
|
RU2358383C1 |
| POWER KEY ON MIS TRANSISTOR | 2009 |
|
RU2395159C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340084C1 |
| POWER SWITCH BUILT AROUND MIS TRANSISTOR | 2004 |
|
RU2263393C1 |
| POWER KEY FOR DTM-TRANSISTOR | 2007 |
|
RU2338316C1 |
| FORCE KEY BUILT ON MIS-TRANSISTOR | 2004 |
|
RU2262187C1 |
| FORCE KEY ON MIS-TRANSISTOR | 2004 |
|
RU2262799C1 |
| POWER KEY ON MIS TRANSISTOR | 2009 |
|
RU2396706C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340085C1 |
