FIELD: electricity.
SUBSTANCE: device includes transformer with secondary winding the end of which is connected directly to source of MIS transistor; double-anode stabilitron is introduced, which is connected between the beginning of secondary transformer winding and gate of MIS transistor.
EFFECT: improving reliability.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| MIS TRANSISTOR POWER KEY | 2008 |
|
RU2390094C2 |
| POWER KEY WITH MIS-TRANSISTOR | 2007 |
|
RU2337473C1 |
| MIS TRANSISTOR POWER KEY | 2008 |
|
RU2358383C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340084C1 |
| POWER KEY BUILT AROUND MIS-TRANSISTOR | 2007 |
|
RU2344542C1 |
| POWER KEY FOR DTM-TRANSISTOR | 2007 |
|
RU2338316C1 |
| POWER SWITCH BUILT AROUND MIS TRANSISTOR | 2004 |
|
RU2263393C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340085C1 |
| FORCE KEY ON MIS-TRANSISTOR | 2004 |
|
RU2262799C1 |
| FORCE KEY BUILT ON MIS-TRANSISTOR | 2004 |
|
RU2262187C1 |
