INTEGRATED CIRCUIT WITH NANO-CONDUCTIVE SENSORS IN FIELD TRANSISTORS, MANUFACTURED BY CHEMICAL METHOD, SENSOR DEVICE, METHOD OF MEASUREMENT AND METHOD OF MANUFACTURE Russian patent published in 2017 - IPC G01N27/414 

FIELD: electricity.

SUBSTANCE: integrated circuit (IC) (100) contains a semiconductor substrate (110); an insulating layer (120) above the said substrate; the first transistor (140) on the said insulating layer, the said first transistor comprises an open channel area (146) between a source region (142a, 142b) and a drain region (144); and a wave voltage signal generator (150) conductively connected to the semiconductor substrate to supply the first transistor with a voltage bias during the signal capturing period, wherein the wave voltage signal generator is configured to generate an alternating bias voltage signal (300) comprising a periodically increasing amplitude. In addition, a sensor device is disclosed including such IC and a measurement method using such IC.

EFFECT: necessity of using a separate reference electrode is eliminated.

15 cl, 8 dwg