METHOD OF SEMICONDUCTOR WAFER MANUFACTURE, SEMICONDUCTOR WAFER FOR SOLAR PLANTS, AND ETCHING SOLUTION Russian patent published in 2008 - IPC H01L21/306 

Abstract RU 2340979 C1

FIELD: electrical engineering.

SUBSTANCE: semiconductor wafer intended for application in solar plants, in which uniform and fine structure of irregularities in the form of pyramid is provided evenly within the limits of its surface, and etching solution for generation of semiconductor wafer that has uniform and fine structure of irregularities. Semiconductor is etched with application of alkaline etching solution, which contains at least one type selected from the group that consists of carbonic acids, which have carbon number of 1-12 and have at least one carboxyl group in molecule, and their salts, so that in this manner structure of irregularities is formed on the surface of semiconductor surface.

EFFECT: safe and efficient method for manufacture of semiconductor wafer, which has perfect efficiency of photoelectric conversion, in which fine structure of irregularities suitable for application in solar element may be uniformly shaped with required size on the surface of semiconductor wafer.

12 cl, 16 dwg, 10 tbl

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RU 2 340 979 C1

Authors

Tsutija Masato

Masimo Ikuo

Kimura Esimiti

Dates

2008-12-10Published

2005-10-26Filed