FIELD: buses.
SUBSTANCE: method for manufacturing a bit bus structure includes the following steps. A conductive layer of the bit line is formed on the surface of the semiconductor substrate, wherein said conductive layer of the bit line is partially placed in a groove in the surface of the semiconductor substrate. The first protective layer is formed on the surfaces of the conductive layer of the bit bus and the semiconductor substrate. The first barrier layer is formed on the surface of the first protective layer. The surface of the first barrier layer is subjected to a passivation treatment. A sacrificial layer is formed on the surface of the first barrier layer, and a filling part is provided on this sacrificial layer, which fills the specified groove. The part of the sacrificial layer, other than the filling part, is stripped and removed using a pickling solution.
EFFECT: enhanced bus performance.
20 cl, 8 dwg
