FIELD: physics, conductors.
SUBSTANCE: invention is related to semiconductor structures produced on semiconductor substrate with reduced density of penetrating dislocations. Semiconductor substrate (1), according to the present invention, is made of III group metal nitrides, having crystalline structure of wurtzite, and is grown in steam phase or on foreign substrate (2) with orientation (0001), with grid parametres that do not correspond to substances of semiconductor substrate, or on existing heavily dislocated layer (3) with orientation (0001) from substances of semiconductor substrate, and has extremely low density of dislocations. According to the present invention for reduction of dislocations density structure is used, which includes layer (4) of dislocations redirection, providing for intentional inclination of penetrating dislocations (6) in direction of high-index crystallographic planes having crystallographic indices that differ from (0001), and such as indexes of {l 100} type, in order to increase probability of dislocation interaction; and layer (5) of dislocations interaction arranged above specified layer (4) of dislocations, in which penetrating dislocations (6) are combined between each other, which results in reduced density of penetrating dislocations on surface of semiconductor substrate (7).
EFFECT: production of semiconductor substrate with heavily reduced density of dislocations.
14 cl, 10 dwg
