DEVICE FOR GROWING SILICON CARBIDE CRYSTALS Russian patent published in 2008 - IPC C30B25/00 C30B25/14 C30B29/36 

FIELD: chemistry.

SUBSTANCE: device contains chamber (1), located along axis, chamber (1) includes separate means (2, 3) for inlet of gases, containing carbon, and for gases, containing silicon, means for supporting padding (4), located in first end zone (Z1) of chamber, means for outlet of waste gases (5), located near means for supporting (4) and means for heating, ensuring chamber (1) heating to temperature above 1800°C; means (2) for inlet of gases, containing silicon, which is located, formed and regulated in such way that gases, containing silicon, enter second end zone (Z2) of chamber; means (3) for outlet of gases, containing carbon, which is located, formed and regulated in such way that carbon and silicon contact, in fact, in central zone (ZC) of chamber, remote both from first end zone (Z1) and from second end zone (Z2), means (2) for inlet of gases containing silicon, contains tube, which is open into second zone (Z2) of chamber and which has in its end part cell for evaporation of liquid silicon particles.

EFFECT: silicon carbide crystals with homogeneous crystal structure and homogeneous chemical composition with constant rate of growth.

19 cl, 3 dwg