MULTI-LAYER THIN-FILM MAGNETO-RESISTIVE NANOSTRUCTURE Russian patent published in 2007 - IPC G11C11/15 

FIELD: magnetic microelements and nanostructures, possible use in sensors of magnetic field and current, recording and logical elements, galvanic cross couplings and spin transistors based on multi-layered thin-film nanostructures with anisotropic or gigantic magneto-resistive effect.

SUBSTANCE: multi-layer thin-film magneto-resistive nanostructure contains first protective layer, upon which first magneto-soft film is positioned, separating non-magnetic layer on top of first magneto-soft film, on top of which in turn second magneto-soft film and second protective layer are positioned, between second magneto-soft film and second protective layer a layer of silicon carbide is positioned, while separating non-magnetic layer is thick enough to prevent interaction of exchange between magneto-soft films.

EFFECT: creation of multi-layer thin-film magneto-resistive nanostructure, having various reverse magnetization fields of magnetic layers included in it, having high reproducibility of magnetic parameters and expanded functional capabilities.

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