MULTI-LAYERED MAGNETO-RESISTIVE NANOSTRUCTURE Russian patent published in 2008 - IPC G11C11/15 H01C7/00 

FIELD: magnetic micro- and nano-elements, possible use in indicators of magnetic field and current, memorizing and galvanic elements, galvanic decoupling and spin transistors based on multi-layered nanostructures with magneto-resistive effect.

SUBSTANCE: in multi-layered magneto-resistive nanostructure composed of magnetic nano-islands, consisting of N pairs of alternating layers, each pair containing layers of nano-islands with different values of magnetic reversal field of magnetic materials positioned on dielectric layer and protected by a solid dielectric layer on top. Such a multi-layered magneto-resistive nanostructure consists of nano-islands positioned separately within each layer. Nano-islands of each layer may contact nano-islands of upper and lower layers, with resulting magnetic interaction between them.

EFFECT: production of multi-layered magneto-resistive nanostructure using magnetic nano-islands, having high value of magneto-resistive effect in small magnetic fields and having high reproducibility of magnetic parameters for serial production of nano-elements based on aforementioned structure.

2 cl, 6 dwg