MULTILAYER MAGNETORESISTIVE COMPOSITE NANOSTRUCTURE Russian patent published in 2011 - IPC G11C11/15 B82B1/00 

Abstract RU 2408940 C2

FIELD: physics.

SUBSTANCE: multilayer magnetoresistive composite nanostructure has several sets of alternating layers of magnetically soft and magnetically hard nanoclusters insulated at the top and bottom by a continuous dielectric layer of antiferromagnetic material. One set has an antiferromagnetic layer, a layer of magnetically soft nanoclusters, an antiferromagnetic layer, a layer of magnetically hard nanoclusters, and a antiferromagnetic layer, where thickness of the nanocluster film is equal to 0.8-2.5 nm. The number of said sets of layers is between 2 and 5.

EFFECT: design of a magnetoresistive nanostructure whose production technology guarantees required parametres, giant magnetoresistive effect in the material with working capacity under high temperature conditions, and high reproducibility of parametres under batch production conditions.

5 cl, 2 dwg

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RU 2 408 940 C2

Authors

Bugaev Aleksandr Stepanovich

Balabanov Dmitrij Evgen'Evich

Baturin Andrej Sergeevich

Baltinskij Valerij Aleksandrovich

Kotov Vjacheslav Alekseevich

Dates

2011-01-10Published

2008-10-27Filed