MULTI-LAYER THIN-FILM MAGNETORESISTIVE NANOSTRUCTURE Russian patent published in 2008 - IPC H01L43/10 

FIELD: technological processes.

SUBSTANCE: in multi-layer thin-film magnetoresistive nanostructure, which contains the first protective layer, on which the first and second magnet soft films are installed, above which the second protective layer is installed, between the first and second magnet soft film semi-conductor separation layer is installed, the component of which is silicon. Thickness of this separating layer is sufficient for elimination of exchange interaction between the first and the second magnet soft films. Semi-conductor layer may be made of, in particular, silicon carbide.

EFFECT: production of multi-layer magnetoresistive nanostructure and expansion of its functional resources.

2 cl, 3 dwg