APPARATUS FOR RECHARGING MATERIAL TO CRUCIBLE Russian patent published in 2002 - IPC

FIELD: processes and equipment for growing silicon monocrystals by Czochralski method, namely apparatuses for recharging material to crucible, possibly in plants for growing silicon monocrystals provided with sluice or semicontinuous growing of monocrystals. SUBSTANCE: apparatus includes reservoir rigidly joined with fixing ring; supporting members arranged in lower end of reservoir; unit for securing reservoir to motion mechanism in which fixing ring is arranged outside of reservoir. The last is provided with openable bottom; unit for securing reservoir is in the form of successively joined flexible tie rods passing on lateral surface along rectilinear generatrix of reservoir at its two opposite sides and forming suspension over upper base of reservoir. Lower end of each terminal tie rod is movably joined with respective supporting member. EFFECT: improved design of apparatus providing controlled discharge of material out of reservoir. 7 cl, 4 dwg