CRUCIBLE FOR DEVICE PRODUCING BLOCK OF CRYSTAL SUBSTANCE AND METHOD FOR PRODUCING THIS SUBSTANCE Russian patent published in 2009 - IPC C30B11/00 C30B15/10 

Abstract RU 2344206 C2

FIELD: metallurgy, crystal growing.

SUBSTANCE: invention refers to process of producing semi-conducting materials, particularly to silicon for photo-electric devices with implementation of crucibles. The crucible for the device producing blocks of a crystal substance by directed crystallisation consists of side walls (8) and base (7); base (7) possesses parallel to the direction essentially perpendicular to the base improved characteristics of heat transfer comparing to characteristics of side walls (8) heat transfer along the said direction; base (7) and side walls (8) are made out of materials containing essentially identical basic chemical components; also base (7) is transparent for infra-red emission, while side walls (8) are not transparent for infra-red emission. As base (7) material amorphous silicon dioxide is used; and non-transparent quartz ceramics are used as a material for side walls (8). Base (7) and side walls (8) of the crucible can be formed with plates made out of the same material -graphite possessing anisotropic properties of thermal conductivity; also thermal conductivity of the plates in their plane is essentially less, than their thermal conductivity in the direction perpendicular to the said plane. There is suggested the device for producing crystalline blocks by directed crystallisation of a liquid phase; the said device contains the crucible between base (7) of which and cooling facilities (4) there is arranged graphite felt (9) and sealing devices (10) of graphite felt (9). At implementing the method in the said device temperature gradient is set during solidification of liquid phase in the crucible within the range from 8°C/cm to 30°C/cm.

EFFECT: production of adequately pure poly-crystalline silicon characterised with bigger length of not basic carriers owing to which efficiency of photo-electric devices is increased.

11 cl, 2 dwg

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RU 2 344 206 C2

Authors

Ajnkhaus Roland

Lissal'D Fransua

Riva Paskal'

Dates

2009-01-20Published

2004-04-09Filed