METHOD OF CONTROL OF MECHANICAL VOLTAGES IN SILICON STRUCTURE FILM SiO - SUBSTRATE Si Russian patent published in 2009 - IPC G01L1/24 

Abstract RU 2345337 C2

FIELD: physics, measuring.

SUBSTANCE: invention concerns the electronic technics, in particular, to microelectronics, and can be used at manufacturing of IS crystals and discrete semiconductor devices. The essence of declared expedient of the control of mechanical voltages in structure film - substrate consists in formation between a film and a substrate of the intermediate stratum which is selectively etched through windows in a film of the round shape with formation in a backlash film - substrate of the interference figure reflecting quantity and a direction of a vector of mechanical voltages.

EFFECT: expansion of technical possibilities of method at expense of possibility of control of direction of vector of mechanical voltages.

4 dwg

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RU 2 345 337 C2

Authors

Sen'Ko Sergej Fedorovich

Belous Anatolij Ivanovich

Ponomar' Vladimir Nikolaevich

Dates

2009-01-27Published

2006-11-07Filed