METHOD FOR MEASURING MECHANICAL STRESSES IN MEMS STRUCTURES Russian patent published in 2018 - IPC G01L1/04 H01L21/66 

FIELD: electrical engineering.

SUBSTANCE: invention relates to electronic engineering, in particular to microelectronics, and can be used in the manufacture of integrated circuit (IC) crystals and discrete semiconductor devices. Essence of the present invention is the measurement of mechanical stresses in MEMS structures, including the formation of a coating film on a substrate. Relative elongation of the coating film is measured by changing the gap between the edges of the beams of the coating film by means of a microscope. Using two beams at the same time, it is possible to check the results of measuring mechanical stresses without conducting additional technological operations to form the second (control) beam from the coating film. For the control beam, the values of the variables b and b_o coincide with the values of these variables for the first (tested) beam. Thus, for measuring mechanical stresses in two structures, four variables will be used from the coating film (b, b_o, L, L** – length of the control beam after etching the substrate fragment).

EFFECT: increase in the accuracy of the control measurement, provision of the ability to work with test and working plates, expansion of the list of instruments for measurement.

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