FIELD: electricity.
SUBSTANCE: invention is intended for jointing semiconductor chip to the body by contact-reactive soldering with formation of Au-Si eutectic alloy at production of transistors and integrated microcircuits. The method for silicone chips mounting to gold-plated surface is suggested for the body with a layer applied onto back side of the chip. Pseudoalloy with thickness of (20-200) nm containing amorphous silicone and 10-50 wt % of gold is applied as the layer.
EFFECT: improved thermal-physical properties of high-power multichip microwave transistors.
3 dwg, 2 tbl
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