PROCESS OF ATTACHMENT OF CRYSTALS OF SILICON DISCRETE SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS TO CASE Russian patent published in 1995 - IPC

Abstract RU 2033659 C1

FIELD: electronics. SUBSTANCE: process includes placement of gold foil between case and crystal and brazing. Foil surface is treated chemically in solution of hydrochloric acid at temperature 18-25 C for the course of 3-5 min followed by rinsing in cold deionized water at same temperature for the course of not less than 1 min and drying in atmosphere of hot air at temperature 70-80 C for the course not less than 5 min. EFFECT: enhanced efficiency of process. 1 dwg, 1 tbl

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RU 2 033 659 C1

Authors

Polekhov V.V.

Lebedev S.L.

Sarychev V.I.

Dates

1995-04-20Published

1992-02-14Filed