FIELD: radio engineering; electronics.
SUBSTANCE: invention relates to semiconductor microelectronics and can be used in production of semiconductor devices, integrated and hybrid microcircuits. Method of mounting semiconductor chips on a gold-coated surface involves applying a contact layer on the reverse side of semiconductor crystals and subsequent contact-reactive soldering of semiconductor chips on the gold-coated surface of the housing on a eutectic alloy. According to the invention, the contact layer deposited on the reverse side of the semiconductor crystals includes successively sputtered titanium-nickel-gold metals, with thickness of 0.08±0.03 mcm, 0.07±0.03 mcm and 0.04±0.02 mcm, respectively, and gold-tin alloy with thickness of 4–6 mcm, which is deposited by galvanic deposition, with gold content of 70–80 %, and soldering of semiconductor chips on gold-coated surface of housing is carried out at temperature of 300–320 °C for 1–2 seconds.
EFFECT: invention enables to obtain high-quality and reliable connection of a crystal with a housing base at a mounting temperature of 300–320 °C, which enables to mount semiconductor crystals of large area, and also enables to mount silicon and arsenide-gallium crystals of semiconductor devices and integrated microcircuits.
1 cl, 2 dwg
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Authors
Dates
2020-02-18—Published
2019-05-21—Filed