METHOD OF FIELD-EFFECT TRANSISTOR PRODUCTION WITH SCHOTTKY BARRIER GATE Russian patent published in 2009 - IPC H01L21/338 

FIELD: electricity.

SUBSTANCE: method includes formation of active field-effect transistor areas, spraying ohm conductors, formation of schottky barrier-type gate and electrical training of the gate. The electrical training is performed by the direct current being 0.8-0.9 from the current when gate is damaged during 30-60 seconds. In addition, the current flows through the gate and DC short-circuited drain and source. The gate is electrically trained during the above period resulting in ordering crystal structure of semiconductor on the board of Schotkky barrier, and in annealing processes defects on the channel surface and in transistor channel.

EFFECT: improved and stabilized parameters and unreliable instruments screening.