PROCESS OF MANUFACTURE OF FIELD-EFFECT TRANSISTOR WITH SUBMICRONIC SHOTTKY-BARRIER GATE Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: process of manufacture of field-effect transistor with submicronic Shottky-barrier gate involves formation of thin doped and thick heavy-doped layers on semi-insulating substrate, formation of electrodes of source ands drain, application of dielectric strip between electrodes which width equals value of resolution of used technological method and which center is matched with edge of source electrode, formation of groove in heavy-doped layer which edge is aligned with edge of dielectric strip facing drain and formation of gate located in groove and partially on dielectric strip. EFFECT: reduced noise and increased gain factors. 5 dwg