FIELD: technological processes.
SUBSTANCE: invention is related to method for production of thin silicon carbide films by method of vacuum laser ablation and may be used for production of thin-film coats and active layers of thin-film receivers of UV radiation in microelectronics. Method includes sputtering of ceramic target by laser beam in conditions of high vacuum without adding of gaseous reagents onto heated substrate. Target is located at the distance of 100mm from substrate, which is heated to the temperature of 25÷350°C . Sputtering is realised for 1-20 min with the help of laser with energy of pumping 15-20 J and in process of laser beam scanning on the surface of ceramic target.
EFFECT: production of thin-film structures on the basis of silicon carbide suitable for production of UV-range detectors (230÷380 nm).
3 dwg
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