FIELD: electrics.
SUBSTANCE: method of photoresist removal involves photoresist film etching from silicon plates by processing in etching agent containing acetone and dimethylformamide. Photoresist film etching is performed at the following component ratio: acetone (CH3COOCH3) to dimethylformamide ((CH3)2NCOH), as 2:1 respectively at room temperature for 2±1 minutes. Cleaning control is performed in focused light beam, with luminescent point number not exceeding 5.
EFFECT: complete removal of photoresist, lower operation temperature, reduced etching duration.
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